(China (Mainland))
Product Summary
The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use.
Parametrics
FLL600IQ-2 absolute maximum ratings: (1)Drain Current, IDSS, when VDS = 5V, VGS = 0V: 24 to 32A; (2)Transconductance, gm, when VDS = 5V, IDS = 14.4A: 12S; (3)Pinch-Off Voltage, Vp, when VDS = 5V, IDS = 1.44A: -1.0 to -3.5V; (4)Gate-Source Breakdown Voltage, VGSO, when IGS = -1.44mA: -5V; (5)Output Power at 1 dB G.C.P, when VDS = 12V, f=1.96GHz, IDS = 4.0A: 47.0 to 48.0dBM; (6)Power Gain at 1 dB G.C.P., when VDS = 12V, f=1.96GHz, IDS = 4.0A: 9.5 to 10.5dB.
Features
FLL600IQ-2 features: (1)Push-Pull Configuration; (2)High Power Output: 60W (Typ.); (3)High PAE: 43% (Typ.); (4)Broad Frequency Range: 800 to 2000 MHz.; (5)Suitable for class AB operation.
Diagrams
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