Product Summary

The MRF151 is a RF Power Field-Effect Transistor. It is designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of the MRF151 makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Parametrics

MRF151 absolute maximum ratings: (1)drain-source voltage:125Vdc; (2)drain-gate voltage:125Vdc; (3)gate-source voltage:±40Vdc; (4)drain current-continuous:16Adc; (5)total device dissipation:300W, darate above 25℃:1.71W/℃; (6)storage temperature range:-65℃ to 150℃; (7)operating junction temperature:200℃.

Features

MRF151 features: (1)Guaranteed Performance at 30 MHz, 50 V:Output Power:150 W, Gain:18 dB (22 dB Typ), Efficiency:40% ; (2)Typical Performance at 175 MHz, 50 V:Output Power:150 W, Gain:13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability.

Diagrams

MRF151 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF151
MRF151
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-175MHz 150Watts 50Volt Gain 18dB
Data Sheet
0-1: $38.16
1-10: $36.25
10-25: $34.34
25-50: $32.44
MRF1511NT1
MRF1511NT1
Freescale Semiconductor
Transistors RF MOSFET Power RF LDMOS FET PLD1.5N
Data Sheet
0-1: $4.66
1-10: $4.40
10-25: $4.09
25-250: $3.04
MRF1513NT1
MRF1513NT1
Freescale Semiconductor
Transistors RF MOSFET Power RF LDMOS FET PLD1.5
Data Sheet
0-1: $4.08
1-25: $3.83
25-100: $3.67
100-500: $3.26
500-1000: $2.17
MRF1513T1
MRF1513T1
Other

Data Sheet
Negotiable 
MRF1517NT1
MRF1517NT1
Freescale Semiconductor
Transistors RF MOSFET Power RF LDMOS FET PLD1.5N
Data Sheet
0-1: $3.16
1-25: $2.81
25-50: $2.72
50-100: $2.35
MRF1517T1
MRF1517T1
Other

Data Sheet
Negotiable 
MRF1518NT1
MRF1518NT1
Freescale Semiconductor
Transistors RF MOSFET Power RF LDMOS FET PLD1.5N
Data Sheet
0-1: $3.37
1-25: $3.00
25-50: $2.91
50-100: $2.50
MRF1518T1
MRF1518T1
Other

Data Sheet
Negotiable